Acceptor related photoluminescence and field emission of ZnO:P nanostructures

被引：2

作者：

Zang, C. H. ^{[1
]}

Tang, C. J. ^{[1
]}

Wang, B. ^{[2
]}

Wang, D. Q. ^{[1
]}

Liu, L. N. ^{[1
]}

Zhang, D. M. ^{[1
]}

Zhang, Y. S. ^{[1
]}

机构：

[1] Luoyang Inst Sci & Technol, Luoyang 471023, Peoples R China

[2] Chinese Acad Sci, Acad Optoelect, Beijing 100085, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2013年 / 140卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Nanostructures; Semiconductors; Photoluminescence spectroscopy; Field emission; P-TYPE ZNO; MOLECULAR-BEAM EPITAXY; BAND;

D O I：

10.1016/j.matchemphys.2013.03.044

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO:P nanobelts were self-assembly synthesized by thermal evaporation of Zn power and P2O5 mixture. The temperature dependence photoluminescence of ZnO:P nanostructures was studied from 81 to 291 K. As the temperature increased from 81 to 111 K, the PL intensity of DAP emission was obviously enhanced. The abnormal PL intensities were ascribed to the acceptor vibration with local phonon and lattice phonon assistant. The PL of zinc vacancy and its replica were well resolved due to the strenuous vibration of Zn vacancy. The replica of zinc vacancy emission increased while the visible emission gradually decreased with the temperature increase. It suggested that there were intensive deep acceptor vibration. The field emission properties of the ZnO:P nanostructures have been investigated according to the acceptor-related PL spectra. The influence of space charge effect on the field emission behaviors was also discussed. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：330 / 334

页数：5

共 24 条

[1]

Allenic A., 2008, APPL PHYS LETT, V92

[2] Field-effect transistors based on single semiconducting oxide nanobelts [J].

Arnold, MS ;

Avouris, P ;

Pan, ZW ;

Wang, ZL .

JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (03) :659-663

[3] Dual-mode mechanical resonance of individual ZnO nanobelts [J].

Bai, XD ;

Gao, PX ;

Wang, ZL ;

Wang, EG .

APPLIED PHYSICS LETTERS, 2003, 82 (26) :4806-4808

[4] Effect of Surface Capping with Poly(vinyl alcohol) on the Photocarrier Relaxation of ZnO Nanowires [J].

Bera, Ashok ;

Basak, Durga .

ACS APPLIED MATERIALS & INTERFACES, 2009, 1 (09) :2066-2070

[5] Reproducible growth of p-type ZnO:N using a modified atomic layer deposition process combined with dark annealing [J].

Dunlop, L. ;

Kursumovic, A. ;

MacManus-Driscoll, J. L. .

APPLIED PHYSICS LETTERS, 2008, 93 (17)

[6] PAIR SPECTRA IN GAP [J].

HOPFIELD, JJ ;

GERSHENZON ;

THOMAS, DG .

PHYSICAL REVIEW LETTERS, 1963, 10 (05) :162-&

[7] Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates [J].

Hsu, CL ;

Chang, SJ ;

Lin, YR ;

Tsai, SY ;

Chen, IC .

CHEMICAL COMMUNICATIONS, 2005, (28) :3571-3573

[8] Silicon-doped carbon nanotubes: a potential resource for the detection of chlorophenols/chlorophenoxy radicals [J].

Jiang, Haihui ;

Zhang, Dongju ;

Wang, Ruoxi .

NANOTECHNOLOGY, 2009, 20 (14)

[9] A comprehensive review of ZnO materials and devices -: art. no. 041301 [J].

Ozgür, U ;

Alivov, YI ;

Liu, C ;

Teke, A ;

Reshchikov, MA ;

Dogan, S ;

Avrutin, V ;

Cho, SJ ;

Morkoç, H .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (04) :1-103

[10] Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers [J].

Reshchikov, MA ;

Shahedipour, F ;

Korotkov, RY ;

Wessels, BW ;

Ulmer, MP .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) :3351-3354

← 1 2 3 →