Distinct Electronic Structure for the Extreme Magnetoresistance in YSb

被引：86

作者：

He, Junfeng ^{[1
,2
,3
]}

Zhang, Chaofan ^{[1
,2
,3
]}

Ghimire, Nirmal J. ^{[4
]}

Liang, Tian ^{[1
,2
,3
]}

Jia, Chunjing ^{[1
,2
,3
]}

Jiang, Juan ^{[5
,6
,7
]}

Tang, Shujie ^{[1
,2
,3
]}

Chen, Sudi ^{[1
,2
,3
]}

He, Yu ^{[1
,2
,3
]}

Mo, S. -K. ^{[5
]}

Hwang, C. C. ^{[7
]}

Hashimoto, M. ^{[8
]}

Lu, D. H. ^{[8
]}

Moritz, B. ^{[1
,2
,3
]}

Devereaux, T. P. ^{[1
,2
,3
]}

Chen, Y. L. ^{[6
,9
]}

Mitchell, J. F. ^{[4
]}

Shen, Z. -X. ^{[1
,2
,3
]}

机构：

[1] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, 2575 Sand Hill Rd, Menlo Pk, CA 94025 USA

[2] Stanford Univ, Geballe Lab Adv Mat, Dept Phys, Stanford, CA 94305 USA

[3] Stanford Univ, Geballe Lab Adv Mat, Dept Appl Phys, Stanford, CA 94305 USA

[4] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[5] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[6] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China

[7] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea

[8] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, 2575 Sand Hill Rd, Menlo Pk, CA 94025 USA

[9] Univ Oxford, Dept Phys, Oxford OX1 3PU, England

来源：

PHYSICAL REVIEW LETTERS | 2016年 / 117卷 / 26期

关键词：

GIANT MAGNETORESISTANCE; ULTRAHIGH MOBILITY; SEMIMETAL PHASE; RESISTIVITY; DISCOVERY; SURFACE;

D O I：

10.1103/PhysRevLett.117.267201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

引用

页数：6

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