Crystallization behaviors of W-doped Sb3Te phase change films

被引：3
作者：
Wang, Guoxiang [1 ]
Shen, Xiang [1 ]
Wang, Hui [1 ]
Nie, Qiuhua [1 ]
Xu, Tiefeng [1 ]
机构：
[1] Ningbo Univ, Res Inst Adv Technol, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China
来源：
VACUUM | 2015年 / 121卷
基金：
中国国家自然科学基金;
关键词：
Thin films; Crystallization; X-ray diffraction; Thermal stability; CHANGE MEMORY APPLICATIONS; THIN-FILMS; GE2SB2TE5;
D O I：
10.1016/j.vacuum.2015.08.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermal stability and crystallization characteristics of W-doped Sb3Te films have been studied systematically. It was found that W atoms Presented in the form of amorphous content, which increased the crystallization temperature and crystalline resistance, sustained uniform single crystalline structure and refined their grain size of Sb3Te films. The optimized W-20.1(Sb3Te)(79.9) film exhibits higher crystallization temperature (similar to 204 degrees C), larger crystalline activation energy (-3.13 eV) and better data retention ability (similar to 123 degrees C for 10 yr) as well as a single stable Sb2Te phase for phase change memory application. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：142 / 146
页数：5
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