Improving surface smoothness and photoluminescence of CdTe(111) A on Si(111) substrates grown by molecular beam epitaxy using Mn atoms

被引：6

作者：

Wang, Jyh-Shyang ^{[1
,2
]}

Tsai, Yu-Hsuan ^{[1
]}

Chen, Chang-Wei ^{[1
]}

Dai, Zi-Yuan ^{[1
]}

Tong, Shih-Chang ^{[1
]}

Yang, Chu-Shou ^{[3
]}

Wu, Chih-Hung ^{[4
]}

Yuan, Chi-Tsu ^{[1
,2
]}

Shen, Ji-Lin ^{[1
,2
]}

机构：

[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan

[2] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli 32023, Taiwan

[3] Tatung Univ, Grad Inst Electroopt Engn, Taipei 10452, Taiwan

[4] Inst Nucl Energy Res, Longtan 32546, Taiwan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 592卷

关键词：

CdTe(111)A epilayer; Molecular beam epitaxy; Mn; Reflection high-energy electron diffraction; Photoluminescence; CDTE; SI(001); HGCDTE; LAYER; MBE;

D O I：

10.1016/j.jallcom.2013.12.253

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This work demonstrates an improvement of the molecular beam epitaxial growth of CdTe( 111) A epilayer on Si( 1 1 1 ) substrates using Mn atoms. The reflection high- energy electron diffraction patterns show that the involvement of some Mn atoms in the growth of CdTe( 1 1 1 ) A is even more effective than the use of a buffer layer with a smooth surface for forming good CdTe( 1 1 1 ) A epilayers. 10 K Photoluminescence spectra show that the incorporation of only 2% Mn significantly reduced the intensity of defect- related emissions and considerably increased the integral intensity of exciton- related emissions by a large factor of about 400. (C) 2014 Elsevier B. V. All rights reserved.

引用

页码：53 / 56

页数：4

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