Improving surface smoothness and photoluminescence of CdTe(111) A on Si(111) substrates grown by molecular beam epitaxy using Mn atoms

被引:6
|
作者
Wang, Jyh-Shyang [1 ,2 ]
Tsai, Yu-Hsuan [1 ]
Chen, Chang-Wei [1 ]
Dai, Zi-Yuan [1 ]
Tong, Shih-Chang [1 ]
Yang, Chu-Shou [3 ]
Wu, Chih-Hung [4 ]
Yuan, Chi-Tsu [1 ,2 ]
Shen, Ji-Lin [1 ,2 ]
机构
[1] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[2] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli 32023, Taiwan
[3] Tatung Univ, Grad Inst Electroopt Engn, Taipei 10452, Taiwan
[4] Inst Nucl Energy Res, Longtan 32546, Taiwan
关键词
CdTe(111)A epilayer; Molecular beam epitaxy; Mn; Reflection high-energy electron diffraction; Photoluminescence; CDTE; SI(001); HGCDTE; LAYER; MBE;
D O I
10.1016/j.jallcom.2013.12.253
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This work demonstrates an improvement of the molecular beam epitaxial growth of CdTe( 111) A epilayer on Si( 1 1 1 ) substrates using Mn atoms. The reflection high- energy electron diffraction patterns show that the involvement of some Mn atoms in the growth of CdTe( 1 1 1 ) A is even more effective than the use of a buffer layer with a smooth surface for forming good CdTe( 1 1 1 ) A epilayers. 10 K Photoluminescence spectra show that the incorporation of only 2% Mn significantly reduced the intensity of defect- related emissions and considerably increased the integral intensity of exciton- related emissions by a large factor of about 400. (C) 2014 Elsevier B. V. All rights reserved.
引用
收藏
页码:53 / 56
页数:4
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