Silicon on insulator pressure sensor based on a thermostable electrode for high temperature applications

被引：13

作者：

Liu, G. D. ^{[1
]}

Cui, W. P. ^{[1
]}

Hu, H. ^{[1
]}

Zhang, F. S. ^{[1
]}

Zhang, Y. X. ^{[1
]}

Gao, C. C. ^{[1
,2
,3
]}

Hao, Y. L. ^{[1
,2
,4
]}

机构：

[1] Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China

[2] Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China

[3] Collaborat Innovat Ctr Micro Nano Fabricat Device, Beijing 100084, Peoples R China

[4] Innovat Ctr MicroNanoelect & Integrated Syst, Beijing 100871, Peoples R China

来源：

MICRO & NANO LETTERS | 2015年 / 10卷 / 10期

基金：

国家高技术研究发展计划(863计划);

关键词：

silicon; elemental semiconductors; silicon-on-insulator; pressure sensors; electrodes; titanium; titanium compounds; platinum; gold; ohmic contacts; thermal stability; transmission lines; Auger electron spectra; measurement errors; calibration; silicon on insulator pressure sensor; thermostable electrode; high temperature applications; linear transmission line method; Auger electron spectroscopy; nonlinearity error; sensitivity; pressure 30 kPa to 150 kPa; temperature; 500; degC; Ti-TiN-Pt-Au; Si; DIFFUSION BARRIER;

D O I：

10.1049/mnl.2015.0181

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500 degrees C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy. To solve the measurement problem, a novel calibration setup is designed to calibrate the absolute pressure sensor at extremely high temperatures. The measurement results have shown that the pressure sensor has a nonlinearity error of 0.17%FS and a sensitivity of 0.24 mV/kPa with a measurement range of 30-150 kPa at 500 degrees C, indicating the good thermal stability of the ohmic contacts.

引用

页码：496 / 499

页数：4

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