Optoelectronic properties of microcrystalline silicon films

被引：2
|
作者：
Wünsch, F [1 ]
Citarella, G [1 ]
Kunst, M [1 ]
机构：
[1] Hahn Meitner Inst Berlin GmbH, Sect Solare Energet, D-14109 Berlin, Germany
来源：
THIN SOLID FILMS | 2002年 / 403卷
关键词：
microcrystalline silicon; transient photoconductivity; mobility;
D O I：
10.1016/S0040-6090(01)01665-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optoelectronic properties of microcrystalline silicon (muc-Si) films were determined by contactless transient photoconductivity measurements in the microwave frequency range. High mobilities were observed in muc-Si produced by laser annealing although the material contains impurities diffused from the substrate and is doped. Hot wire and plasma enhanced chemical vapor deposited (PECVD) muc-Si films are characterized in the best case by mobilities in the order of magnitude of the mobility in a-Si:H. C (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：526 / 529
页数：4
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