Numerical Analysis Of Crystallization In Amorphous Bi-Se-Te Thin Films

被引：0

作者：

Kalla, Jaya ^{[1
]}

Suthar, B. ^{[2
]}

Bhargava, A. ^{[1
]}

机构：

[1] Govt Dungar Coll, Dept Phys, Nanophys Lab, Bikaner 334001, India

[2] Engn Coll, Dept Phys, Bikaner, India

来源：

PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013) | 2013年 / 1536卷

关键词：

Crystallization; Differential Thermal Analysis; Amorpous Film; CHALCOGENIDE GLASSES;

D O I：

10.1063/1.4810393

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results obtained for the isothermal crystallization for bi3 Te17 Se80 thin films have been used to determine the expression for phase transformation rate for a non-isothermal regime. This formalism enables one to determine the apparant energies of the growth rate and nucleation rate. The results show that a temperature range exists where the heterogeneous crystallization is preponderant and for higher temperatures the crystallization becomes homogenous with crystallites of size greater than the film thickness. The apparant activation energy for nucleation EN is 1.09eV while for growth Ev is 0.55eV.

引用

页码：647 / +

页数：2

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