Structural and optical properties of epitaxially laterally overgrown a-plane GaN epilayer on SiO2 stripe patterned r-plane sapphire

被引：8

作者：

Lee, Yong Seok ^{[1
]}

Kim, Hun ^{[2
]}

Seo, Tae Hoon ^{[2
]}

Park, Ah Hyun ^{[2
]}

Lee, Seul Be ^{[2
]}

Chung, Sang Jo ^{[2
]}

Choi, Chel-Jong ^{[3
]}

Suh, Eun-Kyung ^{[2
]}

机构：

[1] IlJIN LED Co Ltd, Ansan 425090, Gyeonggi Do, South Korea

[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[3] Chonbuk Natl Univ, Dept BIN Fus Technol, Jeonju 561756, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2013年 / 9卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

a-plane; r-plane; GaN; MOCVD; MULTIPLE-QUANTUM WELLS; REDUCTION; SUBSTRATE; NITRIDE; GROWTH;

D O I：

10.1007/s13391-013-3065-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the structural anisotropic characteristics of epitaxially laterally overgrown (ELOG) a-plane GaN epilayer on r-plane sapphire substrate with two different SiO2-stripe orientations using metal organic chemical vapor deposition. The SiO2 stipe patterns were made along [0001] and crystographilic orientations of GaN which correspond to and directions of r-plane sapphire, respectively. The ELOG a-plane GaN on [0001]-stripe orientation reveals symmetric morphology in the extent of lateral overgrowth compared to that grown on -oriented stripe. Threading dislocation and basal stacking fault densities in wing region were similar to 8 x 10(7) cm(-2) and similar to 5.2 x 10(4) cm(-1), respectively. Raman measurement of the fully coalesced a-plane GaN indicated a compressive strain of about 0.39 Gpa in the window region.

引用

页码：587 / 592

页数：6

共 31 条

[1] Effect of misorientation angle of r-plane sapphire substrate on a-plane GaN grown by metalorganic vapor phase epitaxy
Araki, Masahiro
Mochimizo, Noriaki
Hoshino, Katsuyuki
Tadatomo, Kazuyuki
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 119 - 123
[2] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS
ARGUELLO, CA
ROUSSEAU, DL
PORTO, SPS
[J]. PHYSICAL REVIEW, 1969, 181 (03): : 1351 - &
[3] Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane (11(2)over-bar0) GaN Light-Emitting Diodes on Sapphire Substrate
Baik, Kwang Hyeon
Seo, Yong Gon
Hong, Soon-Ku
Lee, Seogwoo
Kim, Jaebum
Son, Ji-Su
Hwang, Sung-Min
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (09) : 595 - 597
[4] Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells
Chen, CQ
Adivarahan, V
Yang, JW
Shatalov, M
Kuokstis, E
Khan, MA
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (9AB): : L1039 - L1040
[5] Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire
Chen, CQ
Yang, JW
Wang, HM
Zhang, JP
Adivarahan, V
Gaevski, M
Kuokstis, E
Gong, Z
Su, M
Khan, MA
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (6B): : L640 - L642
[6] Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire
Chitnis, A
Chen, C
Adivarahan, V
Shatalov, M
Kuokstis, E
Mandavilli, V
Yang, J
Khan, MA
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (18) : 3663 - 3665
[7] Threading dislocation reduction via laterally overgrown nonpolar (11(2)over-bar0) a-plane GaN
Craven, MD
Lim, SH
Wu, F
Speck, JS
DenBaars, SP
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1201 - 1203
[8] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire
Craven, MD
Lim, SH
Wu, F
Speck, JS
DenBaars, SP
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (03) : 469 - 471
[9] Properties of GaN and related compounds studied by means of Raman scattering
Harima, H
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (38) : R967 - R993
[10] Defect reduction in (1(1)over-bar00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy -: art. no. 111917
Haskell, BA
Baker, TJ
McLaurin, MB
Wu, F
Fini, PT
DenBaars, SP
Speck, JS
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (11) : 1 - 3

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