14.8-MeV Neutron Irradiation on H-Terminated Diamond-Based MESFETs

被引：12

作者：

Verona, C. ^{[1
]}

Ciccognani, W. ^{[2
]}

Colangeli, S. ^{[2
]}

Limiti, E. ^{[2
]}

Marinelli, Marco ^{[1
]}

Santoni, E. ^{[1
]}

Verona-Rinati, G. ^{[1
]}

Angelone, M. ^{[3
]}

Pillon, M. ^{[3
]}

Pompili, F. ^{[3
]}

Benetti, M. ^{[4
]}

Cannata, D. ^{[4
]}

Di Pietrantonio, F. ^{[4
]}

机构：

[1] Univ Roma Tor Vergata, Dipartimento Ingn Ind, I-00133 Rome, Italy

[2] Univ Roma Tor Vergata, Dipartimento Ingn Elettron, I-00133 Rome, Italy

[3] Assoc EURATOM ENEA Fus, I-00044 Rome, Italy

[4] CNR, Ist Acust & Sensorist OM Corbino IDASC, I-00133 Rome, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 12期

关键词：

Diamond; H-termination; MESFET; neutron radiation effects; radiation hardness; RADIATION; PERFORMANCE; TRANSISTORS; DETECTORS; GENERATOR; FETS;

D O I：

10.1109/LED.2016.2620338

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field-effect transistors (FETs) fabricated on hydrogen-terminated diamond surface have been heavily irradiated with 14.8-MeV neutrons in order to evaluate their possible application in very high neutron fluence environments. The dc performance of the diamond-based FETs, such as drain saturation current and maximum transconductance, has been studied as a function of a 14.8-MeV neutron fluence up to 10(14) n/cm(2), delivered in five steps. The effects on electrical properties of H-terminated diamond surface have also been investigated during the neutron irradiation experiments. The Hall parameters, i.e., sheet hole concentration, hole mobility, and sheet resistance, were monitored before and after each irradiation. The performance remains stable during all the neutron fluence steps, thus assessing a remarkable radiation hardness of diamond-based devices. To the best of our knowledge, this is the first published data on 14-MeV neutron tolerance of diamond FET devices.

引用

页码：1597 / 1600

页数：4

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