Analytical modeling of subthreshold characteristics of ion-implanted symmetric double gate junctionless field effect transistors

被引：22
|
作者：
Singh, Balraj [1 ]
Gola, Deepti [1 ]
Singh, Kunal [1 ]
Goel, Ekta [1 ]
Kumar, Sanjay [1 ]
Jit, Satyabrata [1 ]
机构：
[1] Indian Inst Technol BHU, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 58卷
关键词：
Junctionless FET; Double-gate; Gaussian-like doping; Short channel effects; Subthreshold current; Subthreshold swing; THRESHOLD VOLTAGE; MOSFETS;
D O I：
10.1016/j.mssp.2016.10.051
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports a 2D analytical model for the subthreshold current and subthreshold swing (SS) of ion-implanted Double-Gate Junctionless Field Effect Transistors (DG-JLFETs) with a vertical Gaussian-like doping profile. The effects of gate length, straggle parameter, oxide thickness, channel thickness, and peak doping concentration on subthreshold current and subthreshold swing have been demonstrated. The model results are validated with the simulation data obtained by 2-D TCAD ATLAS (TM) device simulator. Finally, the performance of a CMOS inverter using the DG-JLFET device has been investigated through ATLAS (TM) TCAD mixed mode circuit simulations.
引用
收藏
页码：82 / 88
页数：7
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