Sensitization of the Blue-green Electroluminescence by Gadolinium Coupled to Si Nanocluster Embedded in a SiO2 Matrix

被引:0
作者
Prucnal, Slawomir [1 ]
Rebohle, Lars [1 ]
Sun, Jiaming [1 ,3 ]
Skorupa, Wolfgang [1 ]
Drozdziel, Andrzej [2 ]
Pyszniak, Krzysztof [2 ]
Turek, Marcin [2 ]
Filiks, Janusz [2 ]
Zuk, Jerzy [2 ]
机构
[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Marie Curie Sklodowska Univ, Inst Phys, PL-20031 Lublin, Poland
[3] Nankai Univ, Inst Phys, Tianjin 300071, Peoples R China
来源
MATERIALS SCIENCE-MEDZIAGOTYRA | 2013年 / 19卷 / 02期
关键词
electroluminescence; Gd; Si-nanocrystals; MOSLED; energy transfer; SILICON; PHOTOLUMINESCENCE; MECHANISM;
D O I
10.5755/j01.ms.19.2.1789
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work an enhancement of the blue and green electroluminescence (EL) related to silicon inclusions into SiO2 layer by gadolinium co-doping was investigated. The blue (460 nm) and green (550 nm) EL corresponds to the oxygen-deficient-centres (ODC) and Si nanoclusters with average diameter around 1 nm, respectively. After gadolinium co-doping a fourfold increase of the total EL intensity was observed. It was found that the increase of the blue and green EL is due to the energy transfer from Gd3+ ions to the ODC defects and amorphous silicon nanoclusters. Moreover, the gadolinium co-doping increases the concentration of the small silicon nanoclusters.
引用
收藏
页码:125 / 128
页数:4
相关论文
共 16 条
[1]   Mechanism and performance of forward and reverse bias electroluminescence at 1.54 mu m from Er-doped Si diodes [J].
Franzo, G ;
Coffa, S ;
Priolo, F ;
Spinella, C .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2784-2793
[2]   Role of the Si excess on the excitation of Er doped SiOx [J].
Franzo, Giorgia ;
Pecora, Emanuele ;
Priolo, Francesco ;
Iacona, Fabio .
APPLIED PHYSICS LETTERS, 2007, 90 (18)
[3]   Strong green-yellow electroluminescence from oxidized amorphous silicon nitride light-emitting devices [J].
Huang, Rui ;
Chen, Kunji ;
Han, Peigao ;
Dong, Hengping ;
Wang, Xiang ;
Chen, Deyuan ;
Li, Wei ;
Xu, Jun ;
Ma, Zhongyuan ;
Huang, Xinfan .
APPLIED PHYSICS LETTERS, 2007, 90 (09)
[4]   Light emitting devices based on silicon nanostructures [J].
Irrera, A. ;
Franzo, G. ;
Iacona, F. ;
Canino, A. ;
Di Stefano, G. ;
Sanfilippo, D. ;
Piana, A. ;
Fallica, P. G. ;
Priolo, F. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 38 (1-2) :181-187
[5]  
JAMBOIS O, 2006, APPL PHYS LETT, V89
[6]   Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films [J].
Kim, TY ;
Park, NM ;
Kim, KH ;
Sung, GY ;
Ok, YW ;
Seong, TY ;
Choi, CJ .
APPLIED PHYSICS LETTERS, 2004, 85 (22) :5355-5357
[7]  
Lide D. R., 2006, CRC HDB CHEM PHYS
[8]   Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes [J].
Nazarov, A. N. ;
Osiyuk, I. N. ;
Sun, J. M. ;
Yankov, R. A. ;
Skorupa, W. ;
Tyagulskii, I. P. ;
Lysenko, V. S. ;
Prucnal, S. ;
Gebel, T. ;
Rebohle, L. .
APPLIED PHYSICS B-LASERS AND OPTICS, 2007, 87 (01) :129-134
[9]   Visible photoluminescence from Si clusters in gamma-irradiated amorphous SiO2 [J].
Nishikawa, H ;
Watanabe, E ;
Ito, D ;
Sakurai, Y ;
Nagasawa, K ;
Ohki, Y .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3513-3517
[10]   Defect production and annealing in ion-irradiated Si nanocrystals -: art. no. 144109 [J].
Pacifici, D ;
Moreira, EC ;
Franzò, G ;
Martorino, V ;
Priolo, F ;
Iacona, F .
PHYSICAL REVIEW B, 2002, 65 (14) :1-13