Bandgap tuning in highly c-axis oriented Zn1-xMgxO thin films

被引：90

作者：

Kumar, Parmod ^{[1
]}

Malik, Hitendra K. ^{[1
]}

Ghosh, Anima ^{[2
]}

Thangavel, R. ^{[2
]}

Asokan, K. ^{[3
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India

[2] Indian Sch Mines, Dept Appl Phys, Dhanbad 826004, Bihar, India

[3] IUAC, Div Mat Sci, New Delhi 110067, India

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 22期

关键词：

EDGE EMISSION; ZNO; MGXZN1-XO; GROWTH;

D O I：

10.1063/1.4809575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose Mg doping in zinc oxide (ZnO) films for realizing wider optical bandgap in highly c-axis oriented Zn1-xMgxO (0 <= x <= 0.3) thin films. A remarkable enhancement of 25% in the bandgap by 30% Mg doping was achieved. The bandgap was tuned between 3.25 eV (ZnO) and 4.06 eV (Zn0.7Mg0.3O), which was further confirmed by density functional theory based WIEN2K simulation employing a combined generalized gradient approximation with scissor corrections. The change of stress and crystallite size in these films were found to be the causes for the observed blueshift in the bandgap. (C) 2013 AIP Publishing LLC.

引用

页数：5

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