Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode

被引：4

作者：

Kim, Yoon Hyung ^{[1
]}

Han, Sanghoo ^{[1
]}

Cho, Inje ^{[1
]}

Lee, Jaehoon ^{[2
]}

Park, Jinsub ^{[1
,3
]}

机构：

[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

[2] Samsung Elect, Syst LSI Mfg Operat Ctr, Giheung 17113, South Korea

[3] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Graphene; AlGaN/GaN; Schottky Diode; Ohmic Contact; Schottky Contact; Graphene/Ni/Au; HEMTS;

D O I：

10.1166/jnn.2016.13141

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a simple method for fabricating AlGaN/GaN Schottky barrier diodes (SBDs) that include a graphene layer inserted between the AlGaN and Ni/Au metal layers. The insertion of a graphene interlayer between the Ni/Au metal pads and AlGaN layer produces a contact with ohmic characteristics. Ohmic and Schottky contacts were achieved by depositing graphene/Ni/Au and Ni/Au, respectively, on the AlGaN surface of SBD. The ohmic contacts formed using graphene/Ni/Au displayed a specific contact resistance of 0.23 Omega. cm(2). The optimum annealing temperature for improving device performance was found to be 500 degrees C. The graphene/metal electrode system suggested herein is promising for improving the electrical characteristics of AlGaN/GaN-based optoelectronic devices.

引用

页码：10268 / 10271

页数：4

共 50 条

[41] High-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors [J].

Giannazzo, Filippo ;

Greco, Giuseppe ;

Schiliro, Emanuela ;

Lo Nigro, Raffaella ;

Deretzis, Ioannis ;

La Magna, Antonino ;

Roccaforte, Fabrizio ;

Iucolano, Ferdinando ;

Ravesi, Sebastiano ;

Frayssinet, Eric ;

Michon, Adrien ;

Cordier, Yvon .

ACS APPLIED ELECTRONIC MATERIALS, 2019, 1 (11) :2342-2354

[42] Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier [J].

Roccaforte, F. ;

Iucolano, F. ;

Giannazzo, F. ;

Di Franco, S. ;

Puglisi, V. ;

Raineri, V. .

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :1341-1344

[43] Electrical properties of Cu/Pd2Si Schottky contacts to AlGaN/GaN-on-Si HEMT heterostructures [J].

Wzorek, M. ;

Ekielski, M. ;

Brzozowski, E. ;

Taube, A. .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 153

[44] Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures [J].

Ofuonye, Benedict ;

Lee, Jaseun ;

Yan, Minjun ;

Sun, Changwoo ;

Zuo, Jian-Min ;

Adesida, Ilesanmi .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (09)

[45] Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode [J].

Zhai Dong-Yuan ;

Zhao Yi ;

Cai Yin-Fei ;

Shi Yi ;

Zheng You-Dou .

ACTA PHYSICA SINICA, 2014, 63 (12)

[46] ESD Behavior of AlGaN/GaN Schottky Diodes [J].

Shankar, Bhawani ;

Gupta, Sayak Dutta ;

Soni, Ankit ;

Raghavan, Srinivasan ;

Shrivastava, Mayank .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2019, 19 (02) :437-444

[47] Effect of various treatments on Schottky diode properties [J].

I. Q. Pashaev .

Semiconductors, 2012, 46 :1085-1087

[48] Effect of Hydrogen on Electrical Characteristics of AlGaN/GaN HEMTs After HTO Stress [J].

Liu, Chang ;

Liu, Hongxia ;

Chen, Yiqiang ;

Cai, Zongqi ;

He, Zhiyuan ;

Lai, Ping .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (10) :5895-5900

[49] Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction [J].

Sun, Tao ;

Luo, Xiaorong ;

Wei, Jie ;

Yang, Chao ;

Zhang, Bo .

NANOSCALE RESEARCH LETTERS, 2020, 15 (01)

[50] A 600 V AlGaN/GaN Schottky barrier diode on silicon substrate with fast reverse recovery time [J].

Hsin, Yue-Ming ;

Ke, Tsung-Yu ;

Lee, Geng-Yen ;

Chyi, Jen-Inn ;

Chiu, Hsien-Chin .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4) :949-952

← 1 2 3 4 5 →