Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode

被引：4
作者：
Kim, Yoon Hyung [1 ]
Han, Sanghoo [1 ]
Cho, Inje [1 ]
Lee, Jaehoon [2 ]
Park, Jinsub [1 ,3 ]
机构：
[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
[2] Samsung Elect, Syst LSI Mfg Operat Ctr, Giheung 17113, South Korea
[3] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 10期
基金：
新加坡国家研究基金会;
关键词：
Graphene; AlGaN/GaN; Schottky Diode; Ohmic Contact; Schottky Contact; Graphene/Ni/Au; HEMTS;
D O I：
10.1166/jnn.2016.13141
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report a simple method for fabricating AlGaN/GaN Schottky barrier diodes (SBDs) that include a graphene layer inserted between the AlGaN and Ni/Au metal layers. The insertion of a graphene interlayer between the Ni/Au metal pads and AlGaN layer produces a contact with ohmic characteristics. Ohmic and Schottky contacts were achieved by depositing graphene/Ni/Au and Ni/Au, respectively, on the AlGaN surface of SBD. The ohmic contacts formed using graphene/Ni/Au displayed a specific contact resistance of 0.23 Omega. cm(2). The optimum annealing temperature for improving device performance was found to be 500 degrees C. The graphene/metal electrode system suggested herein is promising for improving the electrical characteristics of AlGaN/GaN-based optoelectronic devices.
引用
收藏
页码：10268 / 10271
页数：4
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