Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode

被引：4

作者：

Kim, Yoon Hyung ^{[1
]}

Han, Sanghoo ^{[1
]}

Cho, Inje ^{[1
]}

Lee, Jaehoon ^{[2
]}

Park, Jinsub ^{[1
,3
]}

机构：

[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

[2] Samsung Elect, Syst LSI Mfg Operat Ctr, Giheung 17113, South Korea

[3] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2016年 / 16卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Graphene; AlGaN/GaN; Schottky Diode; Ohmic Contact; Schottky Contact; Graphene/Ni/Au; HEMTS;

D O I：

10.1166/jnn.2016.13141

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a simple method for fabricating AlGaN/GaN Schottky barrier diodes (SBDs) that include a graphene layer inserted between the AlGaN and Ni/Au metal layers. The insertion of a graphene interlayer between the Ni/Au metal pads and AlGaN layer produces a contact with ohmic characteristics. Ohmic and Schottky contacts were achieved by depositing graphene/Ni/Au and Ni/Au, respectively, on the AlGaN surface of SBD. The ohmic contacts formed using graphene/Ni/Au displayed a specific contact resistance of 0.23 Omega. cm(2). The optimum annealing temperature for improving device performance was found to be 500 degrees C. The graphene/metal electrode system suggested herein is promising for improving the electrical characteristics of AlGaN/GaN-based optoelectronic devices.

引用

页码：10268 / 10271

页数：4

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