Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering

被引：54

作者：

Liu, Dongqing ^{[1
]}

Wang, Nannan ^{[1
]}

Wang, Guang ^{[2
]}

Shao, Zhengzheng ^{[2
]}

Zhu, Xuan ^{[3
]}

Zhang, Chaoyang ^{[1
]}

Cheng, Haifeng ^{[1
]}

机构：

[1] Natl Univ Def Technol, Coll Aerosp Sci & Engn, State Key Lab Adv Ceram Fibers & Composites, Changsha 410073, Hunan, Peoples R China

[2] Natl Univ Def Technol, Ctr Mat Sci, Coll Sci, Changsha 410073, Hunan, Peoples R China

[3] Natl Univ Def Technol, Coll Comp, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 13期

基金：

中国国家自然科学基金;

关键词：

NANOIONICS; TRANSITION; GROWTH; MEMORY;

D O I：

10.1063/1.4800229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous Sr-doped LaMnO3 (a-LSMO) thin films were deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering. The Ag/a-LSMO/Pt device exhibited reversible bipolar resistive switching over 100 cycles with a resistance ratio (high resistance state to low resistance state) of over 4 orders of magnitude and stable retention for over 10(4) s at room temperature. Analysis indicates that the resistive switching originates from the formation/rupture of Ag nanofilaments in the a-LSMO thin films acting as solid electrolytes. The device showed potential for multibit storage as well as low power consumption applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4800229]

引用

页数：5