Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering

被引：53
|
作者：
Liu, Dongqing [1 ]
Wang, Nannan [1 ]
Wang, Guang [2 ]
Shao, Zhengzheng [2 ]
Zhu, Xuan [3 ]
Zhang, Chaoyang [1 ]
Cheng, Haifeng [1 ]
机构：
[1] Natl Univ Def Technol, Coll Aerosp Sci & Engn, State Key Lab Adv Ceram Fibers & Composites, Changsha 410073, Hunan, Peoples R China
[2] Natl Univ Def Technol, Ctr Mat Sci, Coll Sci, Changsha 410073, Hunan, Peoples R China
[3] Natl Univ Def Technol, Coll Comp, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 13期
基金：
中国国家自然科学基金;
关键词：
NANOIONICS; TRANSITION; GROWTH; MEMORY;
D O I：
10.1063/1.4800229
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Amorphous Sr-doped LaMnO3 (a-LSMO) thin films were deposited on Pt/Ti/SiO2/Si substrate by radio frequency magnetron sputtering. The Ag/a-LSMO/Pt device exhibited reversible bipolar resistive switching over 100 cycles with a resistance ratio (high resistance state to low resistance state) of over 4 orders of magnitude and stable retention for over 10(4) s at room temperature. Analysis indicates that the resistive switching originates from the formation/rupture of Ag nanofilaments in the a-LSMO thin films acting as solid electrolytes. The device showed potential for multibit storage as well as low power consumption applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4800229]
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页数：5
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