Orientation Control of ZnO Films Deposited Using Nonequilibrium Atmospheric Pressure N2/O2 Plasma

被引：5

作者：

Nose, Yukinori ^{[1
]}

Nakamura, Tatsuru ^{[1
]}

Yoshimura, Takeshi ^{[1
]}

Ashida, Atsushi ^{[1
]}

Uehara, Tsuyoshi ^{[2
]}

Fujimura, Norifumi ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Sakai, Osaka 5998531, Japan

[2] Sekisui Chem Co Ltd, Kyoto 6018105, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 01期

基金：

日本学术振兴会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; ZINC-OXIDE; PREFERRED ORIENTATION; NITROGEN PLASMA; TEMPERATURE; OXYGEN;

D O I：

10.7567/JJAP.52.01AC03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonequilibrium atmospheric pressure N-2/O-2 plasma was applied to the chemical vapor deposition (CVD) of zinc oxide (ZnO) films on glass substrates at the substrate temperature of 200 degrees C. Although the deposition temperature is very low, the ZnO films showed (0001) preferred orientation including a small amount of diffraction from the (10 (1) over bar1) plane. We attempted to improve the (0001) preferred orientation for ZnO films without increasing the substrate temperature. After systematic experiments, we found that adjusting the ratio of the oxygen flow rate in the total gas flow rate [O-2/(O-2 + N-2) ratio] was effective for orientation control of the ZnO films. This result indicates the potential of nonequilibrium atmospheric pressure N-2/O-2 plasma for the low-temperature CVD process of ZnO films used in piezoelectric devices and transparent thin-film transistors on a flexible substrate. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

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