Cross section measurement of 11B(p,α) 8Be and its application on boron characterization

Existing problems in the published cross section data of the B-11(p,alpha) Be-8 reaction and the consequences in material analysis will be reviewed. The existing cross section data on this reaction shows errors of up to 30% and inconsistency as high as 50%. New experimental data of the cross sections with the standard deviation better than 3% are presented. Application of NRA/Channeling for both the chemical concentration profiles and the carrier profiles of B implanted into silicon will be introduced. We used NRA/Channeling combined with anodic stripping to get the chemical and carrier depth profiles simultaneously. B-11(p, alpha) Be-8 reaction at incident beam energy of 660 keV was used to probe B-11 atoms. Channeling technique was applied to measure the lattice location of the B-11 atoms. Anodic oxidation stripping was used to get differential depth information. This technique can deliver consistent and reliable chemical depth profiles of B-11 as well as the carrier depth profiles. The differential NRA/Channeling technique is essential in studies of ion implantation, TED, activation and deactivation, and defect engineering application in ultra-shallow junction research.