Effect of Al incorporation on the performance and reliability of p-type metal-oxide-semiconductor field effect transistors

被引：0

作者：

Heo, Yoon-Uk ^{[2
]}

Jang, Tae-Young ^{[1
]}

Kim, Donghyup ^{[1
]}

Chang, Jun Suk ^{[1
]}

Manh Cuong Nguyen ^{[1
]}

Hasan, Musarrat ^{[1
]}

Yang, Hoichang ^{[1
]}

Jeong, Jae Kyeong ^{[1
]}

Choi, Rino ^{[1
]}

Choi, Changhwan ^{[3
]}

机构：

[1] Inha Univ, Inchon 402751, South Korea

[2] Pohang Univ Sci & Technol POSTECH, GIFT, Pohang 790784, South Korea

[3] Hanyang Univ, Seoul 133791, South Korea

来源：

THIN SOLID FILMS | 2012年 / 521卷

关键词：

Al; Al2O3 metal gate; high-k dielectrics; NBTI; DEVICE PERFORMANCE; GATE TRANSISTORS; LOGIC TECHNOLOGY; DIELECTRICS; STACKS;

D O I：

10.1016/j.tsf.2012.02.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study examined the performance and reliability of HfO2 gate dielectrics in p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) capped with Al or Al2O3. The presence of Al capping deteriorated the pMOSFET scalability and channel mobility compared to Al2O3 capping. Al capping caused a higher rate of Al diffusion in the HfO2 dielectric layer, reducing the device performance and oxide thickness scaling. This degradation of the negative bias temperature instability of the Al-incorporated sample was attributed to decay of the interface quality rather than to a decrease in charge trapping in the bulk high-k dielectric. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：119 / 122

页数：4

共 26 条

[1] A comprehensive model for PMOS NBTI degradation: Recent progress [J].

Alam, M. A. ;

Kufluoglu, H. ;

Varghese, D. ;

Mahapatra, S. .

MICROELECTRONICS RELIABILITY, 2007, 47 (06) :853-862

[2] Work function engineering using lanthanum oxide interfacial layers [J].

Alshareef, H. N. ;

Quevedo-Lopez, M. ;

Wen, H. C. ;

Harris, R. ;

Kirsch, P. ;

Majhi, P. ;

Lee, B. H. ;

Jammy, R. ;

Lichtenwalner, D. J. ;

Jur, J. S. ;

Kingon, A. I. .

APPLIED PHYSICS LETTERS, 2006, 89 (23)

[3]

Choi K., 2006, APPL PHYS LETT, V93

[4] Impact of gate workfunction on device performance at the 50 nm technology node [J].

De, I ;

Johri, D ;

Srivastava, A ;

Osburn, CM .

SOLID-STATE ELECTRONICS, 2000, 44 (06) :1077-1080

[5] Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices [J].

Govindarajan, S. ;

Boescke, T. S. ;

Sivasubramani, P. ;

Kirsch, P. D. ;

Lee, B. H. ;

Tseng, H.-H. ;

Jammy, R. ;

Schroeder, U. ;

Ramanathan, S. ;

Gnade, B. E. .

APPLIED PHYSICS LETTERS, 2007, 91 (06)

[6]

HARRISA HR, 2006, P INT REL PHYS S, P661

[7]

Hauser JR, 1998, AIP CONF PROC, V449, P235

[8] Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k/SiO2 interface [J].

Iwamoto, Kunihiko ;

Kamimuta, Yuuichi ;

Ogawa, Arito ;

Watanabe, Yukimune ;

Migita, Shinji ;

Mizubayashi, Wataru ;

Morita, Yukinori ;

Takahashi, Masashi ;

Ota, Hiroyuki ;

Nabatame, Toshihide ;

Toriumi, Akira .

APPLIED PHYSICS LETTERS, 2008, 92 (13)

[9] Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS [J].

Kadoshima, M. ;

Sugita, Y. ;

Shiraishi, K. ;

Watanabe, H. ;

Ohta, A. ;

Miyazaki, S. ;

Nakajima, K. ;

Chikyow, T. ;

Yamada, K. ;

Aminaka, T. ;

Kurosawa, E. ;

Matsuki, T. ;

Aoyama, T. ;

Nara, Y. ;

Ohji, Y. .

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, :66-+

[10] Reliability of La-Doped Hf-Based Dielectrics nMOSFETs [J].

Kang, Chang Yong ;

Kirsch, Paul D. ;

Lee, Byoung Hun ;

Tseng, Hsing-Huang ;

Jammy, Rajarao .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2009, 9 (02) :171-179

← 1 2 3 →