Centimeter-Scale Nanoporous 2D Membranes and Ion Transport: Porous MoS2 Monolayers in a Few-Layer Matrix

被引:25
作者
Das, Paul Masih [1 ]
Thiruraman, Jothi Priyanka [1 ,2 ]
Chou, Yung-Chien [1 ]
Danda, Gopinath [1 ,2 ]
Drndic, Marija [1 ]
机构
[1] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA
[2] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA
关键词
Transition metal dichalcogenides; molybdenum disulfide; nanopore; nanoporous atomically thin membranes; defects; PAN etchant; MOLYBDENUM-DISULFIDE; HYDROGEN EVOLUTION; DNA TRANSLOCATION; NANOFILTRATION; DESALINATION; FABRICATION; GROWTH; WS2;
D O I
10.1021/acs.nanolett.8b04155
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional nanoporous membranes have received attention as catalysts for energy generation and membranes for liquid and gas purification but controlling their porosity and facilitating large-scale production is challenging. We show the growth and fabrication of centimeter-scale molybdenum disulfide (MoS2) membranes with tunable porous areas up to similar to 10% of the membrane and average nanopore diameters as large as similar to 30 nm, controlled by the etch time. We also measure ionic conductance between 0.1 and 16 mu S per mu m(2) through variably etched nanoporous membranes. Ensuring the mechanical robustness and large-area of the membrane, bilayer and few-layer regions form a strong supporting matrix around monolayer regions, observed by aberration-corrected scanning transmission electron microscopy. During etching, nanopores form in thin, primarily monolayer areas whereas thicker multilayer regions remain essentially intact. Atomic-resolution imaging reveals that after exposure to the etchant, the number of V-IMO vacancies increases and nanopores form along grain boundaries in monolayers, suggesting that etching starts at intrinsic defect sites. This work provides an avenue for the scalable production of nanoporous atomically thin membranes.
引用
收藏
页码:392 / 399
页数:8
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