A method for an accurate determination of stoichiometric deviations in CdTe and CdZnTe bulk crystals

被引：12

作者：

Zappettini, A. ^{[1
]}

Waldner, R. ^{[1
]}

Bissoli, F. ^{[1
]}

Zha, M. ^{[1
]}

Zanotti, L. ^{[1
]}

Paorici, C. ^{[2
]}

机构：

[1] IMEM CNR, I-43010 Parma, Italy

[2] INFM, Dept Phys, I-43010 Parma, Italy

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Characterization; Phase equilibria; Semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2004.11.064

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A technique for determining the stoichiometry of CdTe and CdZnTe crystals is presented. The sensitivity of this technique reaches the 10(-4) mol% range, while previously reported ones hardly reach the 10(-2) mol% range. The technique is thus suited both for the determination of the stoichiometry of polycrystalline charges to be used as feed material for the crystal growth and for the characterization of the room temperature point defect disorder of single CdZnTe crystals. (C) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：E571 / E575

页数：5

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