Nitrogen-doped graphene for high performance ultracapacitors and the importance of nitrogen-doped sites at basal-planes

被引：0
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作者：
Jeong, Hyungmo [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 243卷
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暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
49-ORGN
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页数：1
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