Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition

被引：10

作者：

Fu, S. F. ^{[1
]}

Chen, C. Y. ^{[1
]}

Li, F. W. ^{[1
]}

Hsu, C. H. ^{[1
]}

Chou, W. C. ^{[1
]}

Chang, W. H. ^{[1
]}

Chen, W. K. ^{[1
]}

Ke, W. C. ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Yuan Ze Univ, Dept Mech Engn, Chungli 320, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2013年 / 383卷

关键词：

X-ray diffraction; Metal-organic vapor phase epitaxy; Nitrides; Semiconducting indium compounds; PHASE-SEPARATION; QUANTUM-WELLS; ALLOYS; LAYERS; EPILAYERS; EPITAXY; GAINN; MODE;

D O I：

10.1016/j.jcrysgro.2013.07.030

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Good-optical-quality, thick InxGa1-xN films with high In content were grown using a homemade two-heater metal-organic chemical vapor deposition system. By varying the growth temperature, it was Found that the In composition of the InGaN epilayer varied from 18 to 59% as the substrate temperature decreased from 750 to 625 degrees C. Our results show that the optical properties in terms of the emission peak wavelength and linewidth are uniformly distributed throughout the entire 2 in. wafer for the x=0.40 InGaN sample. The resultant mean peak wavelength and FWHM are 808 +/- 6 nm and 229 +/- 18 meV, respectively, at 18 K. In addition, for the InGaN film grown at 625 degrees C, a noticeable decrease in the In composition occurred when the ceiling temperature was >800 degrees C, indicative of the occurrence of parasitic reactions in the gas phase. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：106 / 111

页数：6

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