A Charge-Based OTFT Model for Circuit Simulation

被引：36

作者：

Torricelli, Fabrizio ^{[1
]}

Kovacs-Vajna, Zsolt A. ^{[1
]}

Colalongo, Luigi ^{[1
]}

机构：

[1] Univ Brescia, Dept Elect Automat, I-25123 Brescia, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 01期

关键词：

Charge control approach; circuit simulation; compact modeling; organic thin-film transistors (OTFTs); variable-range hopping (VRH); THIN-FILM TRANSISTORS; MOS-TRANSISTOR;

D O I：

10.1109/TED.2008.2007717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a mathematical model for the dc/dynamic current of organic thin-film transistors is proposed. The model is based on the variable-range hopping transport theory, i.e., thermally activated tunneling of carriers between localized states, and the mathematical expression of the current is formulated by means of the channel accumulation charge. It accurately accounts for below-threshold, linear, and saturation operating conditions via a single formulation, and does not require the explicit definition of the threshold and saturation voltages. Basing on the charge control approach, the de model is straightforwardly generalized to dynamic conditions; the resulting mathematical expressions are simple and suitable for CAD applications.

引用

页码：20 / 30

页数：11

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