Characterization of ZnO and ZnO:Al thin films deposited by the sol-gel dip-coating technique

被引:49
作者
Marotti, R. E. [1 ]
Bojorge, C. D. [2 ]
Broitman, E. [3 ]
Canepa, H. R. [4 ]
Badan, J. A. [1 ]
Dalchiele, E. A. [1 ]
Gellman, A. J. [3 ]
机构
[1] Univ Republica, Fac Ingn, Inst Fis, Montevideo 11000, Uruguay
[2] CINSO, CITEFA, REPSOL YPF, Buenos Aires, DF, Argentina
[3] Carnegie Mellon Univ, Dept Chem Engn, Pittsburgh, PA 15213 USA
[4] Consejo Nacl Invest Cient & Tecn, CITEFA, CINSO, RA-1033 Buenos Aires, DF, Argentina
关键词
Zinc oxide; Optical properties; Doping; Thin films; Sol-gel; Temperature programmed desorption;
D O I
10.1016/j.tsf.2008.06.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanocrystalline zinc oxide films have been obtained by the sol-gel process. The films were deposited from precursor solutions by dip-coating on quartz substrates, and subsequently transformed into nanocrystalline pure or aluminium-doped ZnO films after a thermal treatment. The film microstructure and composition characterization Was Studied by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The optical properties were studied by transmittance spectroscopy. The water adsorption energy was measured by temperature programmed desorption (TPD) in the range 90-700 K. The optical transmittance in the UV region gives bandgap energy values of 3.27 eV for undoped samples, and higher than 3.30 eV for the Al-doped ones. The increase in bandgap energy in Al-doped samples may be explained by band-filling effects. The band edge absorption coefficient increases monotonically for the Al-doped samples but has a shoulder for the undoped ones, which may be assigned to room-temperature excitonic absorption. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1077 / 1080
页数:4
相关论文
共 19 条
[1]   Sol-gel-derived c-axis oriented ZnO thin films [J].
Bao, DH ;
Gu, HS ;
Kuang, AX .
THIN SOLID FILMS, 1998, 312 (1-2) :37-39
[2]  
BHARGAVA RN, 1997, EMIS DATAREVIEWS SER, V17, P27
[3]   Synthesis and optical characterization of ZnO and ZnO:Al nanocrystalline films obtained by the sol-gel dip-coating process [J].
Bojorge, C. D. ;
Canepa, H. R. ;
Gilabert, U. E. ;
Silva, D. ;
Dalchiele, E. A. ;
Marotti, R. E. .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2007, 18 (11) :1119-1125
[4]   X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films [J].
Chen, M ;
Wang, X ;
Yu, YH ;
Pei, ZL ;
Bai, XD ;
Sun, C ;
Huang, RF ;
Wen, LS .
APPLIED SURFACE SCIENCE, 2000, 158 (1-2) :134-140
[5]   Plasma-assisted molecular beam epitaxy for ZnO based II-VI semiconductor oxides and their heterostructures [J].
Chen, YF ;
Ko, HJ ;
Hong, SK ;
Sekiuchi, T ;
Yao, T ;
Segawa, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1514-1517
[6]   Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(000(1)over-bar) [J].
Coppa, BJ ;
Davis, RF ;
Nemanich, RJ .
APPLIED PHYSICS LETTERS, 2003, 82 (03) :400-402
[7]   Electrodeposition of ZnO thin films on n-Si(100) [J].
Dalchiele, EA ;
Giorgi, P ;
Marotti, RE ;
Martín, F ;
Ramos-Barrado, JR ;
Ayouci, R ;
Leinen, D .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 70 (03) :245-254
[8]   Shape-control of nano-ZnO by changing the solvent [J].
Fu, Zhengping ;
Wang, Zhen ;
Yang, Beifang ;
Yang, Yingling ;
Yan, Hongwei ;
Xia, Linsheng .
MATERIALS LETTERS, 2007, 61 (26) :4832-4835
[9]  
*JCPDS, 1992, 50664 JCPDS
[10]   Optical characterization of nanostructured ZnO and TiO2 films [J].
Keis, K ;
Roos, A .
OPTICAL MATERIALS, 2002, 20 (01) :35-42