InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands

被引：36
作者：
Han, Yu [1 ]
Li, Qiang [1 ]
Ng, Kar Wei [2 ]
Zhu, Si [1 ]
Lau, Kei May [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[2] Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Macau, Peoples R China
来源：
NANOTECHNOLOGY | 2018年 / 29卷 / 22期
关键词：
InP nano-ridges; III-V on Si; Si photonics; InGaAs quantum wires; LASERS; SI;
D O I：
10.1088/1361-6528/aab53b
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the growth of vertically stacked InGaAs/InP quantum wires on (001) Si substrates with adjustable room-temperature emission at telecom bands. Based on a self-limiting growth mode in selective area metal-organic chemical vapor deposition, crescent-shaped InGaAs quantum wires with variable dimensions are embedded within InP nano-ridges. With extensive transmission electron microscopy studies, the growth transition and morphology change from quantum wires to ridge quantum wells (QWs) have been revealed. As a result, we are able to decouple the quantum wires from ridge QWs and manipulate their dimensions by scaling the growth time. With minimized lateral dimension and their unique positioning, the InGaAs/InP quantum wires are more immune to dislocations and more efficient in radiative processes, as evidenced by their excellent optical quality at telecom-bands. These promising results thus highlight the potential of combining low-dimensional quantum wire structures with the aspect ratio trapping process for integrating III-V nano-light emitters on mainstream (001) Si substrates.
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页数：6
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