First-principles study of the compensation mechanism in N-doped ZnO

被引：51

作者：

Lee, EC ^{[1
]}

Kim, YS ^{[1
]}

Jin, YG ^{[1
]}

Chang, KJ ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Yusung Ku, Taejon 305701, South Korea

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

ZnO; nitrogen; compensation;

D O I：

10.1016/S0921-4526(01)00838-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Based on first-principles electronic structure calculations for N-related and native point defects in Zinc Oxide (ZnO), we propose a mechanism for the compensation of N acceptors. As compared to a normal N-2 source, the use of an active plasma N-2 gas generally increases the N solubility limit, because the N chemical potential is enhanced. However., whenever a pure N source is used, N acceptors are greatly compensated by donor defects, which may explain the difficulty in achieving low-resistance p-type ZnO. Major compensating donors for N acceptors are found to be different at low and high N doping levels, and also depend on the type of N-2 gas source. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：912 / 915

页数：4

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