Synthesis of orderly nanostructure of crystalline GaN nanoparticles on anodic porous alumina membrane

被引:11
作者
Cheng, GS [1 ]
Zhang, LD [1 ]
Zhu, XG [1 ]
Chen, SH [1 ]
Li, Y [1 ]
Zhu, Y [1 ]
Fei, GT [1 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
来源
NANOSTRUCTURED MATERIALS | 1999年 / 11卷 / 03期
关键词
D O I
10.1016/S0965-9773(99)00322-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Synthesis of an orderly nanostructure of crystalline GaN nanoparticles on anodic porous alumina membrane through a gas reaction of Ga2O vapor with a constant ammonia atmosphere at 900 degrees C was achieved. The investigation using atomic force microscopy, x-ray diffraction, transmission electron microscopy and high resolution electron microscopy indicated that the orderly nanostructure consisted of polycrystalline GaN nanoparticles with a hexagonal wurtzite structure and about 10-20 nm in diameter. The growth mechanism of the orderly nanostructure of the GaN nanoparticles was discussed. The photoluminescence spectrum of the orderly nanostructure was also reported. (C) 1999 Acta Metallurgica Inc.
引用
收藏
页码:421 / 426
页数:6
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