Auger carrier leakage in III-nitride quantum-well light emitting diodes

被引：27

作者：

Deppner, Marcus ^{[1
]}

Roemer, Friedhard ^{[1
]}

Witzigmann, Bernd ^{[1
]}

机构：

[1] Computat Elect & Photon Grp, D-34121 Kassel, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 11期

关键词：

light emitting diodes; Auger recombination; quantum efficiency; GaN; SIMULATION; TRANSPORT;

D O I：

10.1002/pssr.201206367

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Auger induced leakage is shown to be a contributing factor for the internal quantum efficiency (IQE) droop in III-nitride quantum-well light emitting diodes (LEDs). The mechanism is based on leakage current from carrier spill-out of the well originating from energy transfer during Auger recombination. Adding this leakage reduces the Auger coefficient by 50% when compared to a standard Auger model with cubic density dependence. As reference, experimental data of a green quantum-well LED are taken. Direct leakage due to non-ideal carrier capture and re-emission out of the well affects the IQE at current densities much larger than the maximum IQE point. (c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：418 / 420

页数：3

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