Raman spectra of GaSe epitaxial layers grown on GaAs substrates and group-theoretical analysis of their vibrational modes

被引：1

作者：

Davydov, V. Yu ^{[1
]}

Kitaev, Yu E. ^{[1
]}

Smirnov, A. N. ^{[1
]}

Eliseyev, I. A. ^{[1
]}

Starukhin, A. N. ^{[1
]}

Avdienko, P. S. ^{[1
]}

Sedova, I. V. ^{[1
]}

Sorokin, S. V. ^{[1
]}

机构：

[1] Ioffe Inst, 26 Politekhn Skaya, St Petersburg 194021, Russia

来源：

INTERNATIONAL CONFERENCE PHYSICA.SPB/2019 | 2019年 / 1400卷

关键词：

D O I：

10.1088/1742-6596/1400/5/055007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A complete group-theoretical analysis of vibrational modes in epsilon, beta, gamma-GaSe polytypes has been performed. Raman spectroscopy data obtained on single crystals of epsilon-GaSe with a subsequent group-theoretical analysis were used to analyze the Raman spectra low-dimensional GaSe structures. Information was obtained on the structural properties of epitaxial layers and arrays of nanorods of the epsilon-polytype GaSe grown by molecular beam epitaxy on GaAs (001) substrates.

引用

页数：6

共 50 条

[41] Elimination of an artifact in the photoluminescence spectra of heavily doped C-GaAs epitaxial layers on undoped GaAs substrates
Lu, Z.H., 1600, (75):
[42] Phonons in Short-Period GaN/AlN Superlattices: Group-Theoretical Analysis, Ab initio Calculations, and Raman Spectra
Davydov, Valery
Roginskii, Evgenii
Kitaev, Yuri
Smirnov, Alexander
Eliseyev, Ilya
Nechaev, Dmitrii
Jmerik, Valentin
Smirnov, Mikhail
NANOMATERIALS, 2021, 11 (02) : 1 - 21
[43] Group-theoretical consideration of Raman modes in Nd-doped PZT thin films for structure characterization
Univ of Oulu, Oulu, Finland
Ferroelectrics, 1996, 184 (1 -4 pt 2): : 69 - 78
[44] Magneto-optical spectra of epitaxial ferromagnetic MnAs films grown on Si and GaAs substrates
Nazmul, AM
Shimizu, H
Tanaka, M
JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 6791 - 6793
[45] CRYSTALLOGRAPHIC AND GROUP-THEORETICAL ANALYSIS OF SPECTRA OF PAIRS OF IMPURITY IONS IN CRYSTALS - GENERAL THEORETICAL SCHEME
MEN, BA
NAISH, VE
MEN, AN
KRISTALLOGRAFIYA, 1974, 19 (05): : 916 - 921
[46] GROUP-THEORETICAL CONSIDERATION OF RAMAN MODES IN Nd-DOPED PZT THIN FILMS FOR STRUCTURE CHARACTERIZATION
Frantti, J.
Lantto, V.
Lappalainen, J.
FERROELECTRICS, 1996, 184 : 69 - 78
[47] SOME PROPERTIES OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GROWN GAAS-LAYERS ON IN-DOPED GAAS SUBSTRATES
IMAI, T
FUKE, S
MORI, K
KUWAHARA, K
JOURNAL OF APPLIED PHYSICS, 1989, 65 (10) : 3877 - 3882
[48] Analysis of strain relaxation by microcracks in epitaxial GaAs grown on Ge/Si substrates
Colombo, D.
Grilli, E.
Guzzi, M.
Sanguinetti, S.
Marchionna, S.
Bonfanti, M.
Fedorov, A.
von Kanel, H.
Isella, G.
Mueller, E.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)
[49] Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
Feng, ZC
Yang, TR
Hou, YT
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2001, 4 (06) : 571 - 576
[50] RAMAN-STUDY OF MISFIT STRAIN AND ITS RELAXATION IN ZNSE LAYERS GROWN ON GAAS SUBSTRATES
MATSUMOTO, T
KATO, T
HOSOKI, M
ISHIDA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L576 - L578

← 1 2 3 4 5 →