Raman spectra of GaSe epitaxial layers grown on GaAs substrates and group-theoretical analysis of their vibrational modes

被引：1
|
作者：
Davydov, V. Yu [1 ]
Kitaev, Yu E. [1 ]
Smirnov, A. N. [1 ]
Eliseyev, I. A. [1 ]
Starukhin, A. N. [1 ]
Avdienko, P. S. [1 ]
Sedova, I. V. [1 ]
Sorokin, S. V. [1 ]
机构：
[1] Ioffe Inst, 26 Politekhn Skaya, St Petersburg 194021, Russia
来源：
INTERNATIONAL CONFERENCE PHYSICA.SPB/2019 | 2019年 / 1400卷
关键词：
D O I：
10.1088/1742-6596/1400/5/055007
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A complete group-theoretical analysis of vibrational modes in epsilon, beta, gamma-GaSe polytypes has been performed. Raman spectroscopy data obtained on single crystals of epsilon-GaSe with a subsequent group-theoretical analysis were used to analyze the Raman spectra low-dimensional GaSe structures. Information was obtained on the structural properties of epitaxial layers and arrays of nanorods of the epsilon-polytype GaSe grown by molecular beam epitaxy on GaAs (001) substrates.
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页数：6
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