Raman spectra of GaSe epitaxial layers grown on GaAs substrates and group-theoretical analysis of their vibrational modes

被引：1

作者：

Davydov, V. Yu ^{[1
]}

Kitaev, Yu E. ^{[1
]}

Smirnov, A. N. ^{[1
]}

Eliseyev, I. A. ^{[1
]}

Starukhin, A. N. ^{[1
]}

Avdienko, P. S. ^{[1
]}

Sedova, I. V. ^{[1
]}

Sorokin, S. V. ^{[1
]}

机构：

[1] Ioffe Inst, 26 Politekhn Skaya, St Petersburg 194021, Russia

来源：

INTERNATIONAL CONFERENCE PHYSICA.SPB/2019 | 2019年 / 1400卷

关键词：

D O I：

10.1088/1742-6596/1400/5/055007

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A complete group-theoretical analysis of vibrational modes in epsilon, beta, gamma-GaSe polytypes has been performed. Raman spectroscopy data obtained on single crystals of epsilon-GaSe with a subsequent group-theoretical analysis were used to analyze the Raman spectra low-dimensional GaSe structures. Information was obtained on the structural properties of epitaxial layers and arrays of nanorods of the epsilon-polytype GaSe grown by molecular beam epitaxy on GaAs (001) substrates.

引用

页数：6

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