A 45-nm RFSOI CMOS Based Compact Doherty Power Amplifier For mm-wave SG Applications

A compact Doherty power amplifier (PA) with a single transformer is demonstrated in a 45-nm RFSOI CMOS device technology. The newly designed 45-nm RFSOI based two stage differential Doherty PA shows a saturated output power (PsAT) of >21.2 dBm, power gain of >18.8 dB, and a peak power-added efficiency (PAE) of > 34.3% at the 27 GHz CW signal. These results show much improved performances compared to our previous PA (PsAT: 18.8 dBm, peak PAE 30 %), which is fabricated in a 28-nm bulk CMOS. Under the 5G NR 64 AM OFDM (PAPR >10 dB), the PA IC exhibits superior linear output power (PLr) of 14.8 dBm and average PAE of 19.8 %. The PA IC occupies as compact core area as 680 mu m x 280 mu m.