Trace analysis of non-basal plane misfit stress relaxation in (20(2)over-bar1) and (30(3)over-bar(1)over-bar) semipolar InGaN/GaN heterostructures

被引：36

作者：

Hardy, Matthew T. ^{[1
]}

Hsu, Po Shan ^{[1
]}

Wu, Feng ^{[1
]}

Koslow, Ingrid L. ^{[1
]}

Young, Erin C. ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

Romanov, Alexey E. ^{[1
,3
,4
]}

DenBaars, Steven P. ^{[1
,2
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia

[4] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 20期

关键词：

D O I：

10.1063/1.4716465

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied primary and secondary slip systems in the relaxation of lattice mismatch stresses in (20 (2) over bar1) and (30 (3) over bar(1) over bar) semipolar InxGa1-xN/GaN heterostructures by analyzing the geometry of traces associated with dislocations employing cathodoluminescence, x-ray diffraction, and transmission electron microscopy. For (20 (2) over bar1) InxGa1-xN/GaN heterostructures, the primary relaxation is by dislocation glide on the c-plane 11 (2) over bar0(0001) slip system and secondary relaxation is by dislocation glide on inclined planes including the m-plane < 11 (2) over bar0 >{1 (1) over bar 00} slip system. For (30 (3) over bar(1) over bar) grown heterostructures non-basal slip, namely dislocation glide on the m-plane slip system, is the initial stress relaxation pathway. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4716465]

引用

页数：4

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