Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy

被引：6

作者：

Kunitsyna, EV ^{[1
]}

Andreev, IA ^{[1
]}

Charykov, NA ^{[1
]}

Solov'ev, YV ^{[1
]}

Yakovlev, YP ^{[1
]}

机构：

[1] RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

Ga1-xInxAsy Sb1-x; EFLCP thermodynamic model; Ga-In-As-Sb-Pb system; Gibbs energy;

D O I：

10.1016/S0169-4332(98)00677-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gallium antimonide (GaSb) and its solid solutions are widely used in optoelectronic devices for the ecologically important spectral range 2-5 mu m. In this paper we discuss a novel approach of using neutral solvents (such as Ph) in GaInAsSb growth process. We employed the excess thermodynamic functions and linear combinations of chemical potentials (EFLCP) thermodynamic model to calculate the melt-solid phase diagrams in the Ga-In-As-Sb-Pb system. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：371 / 374

页数：4

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