Synthesis and Transistor Properties of Asymmetric Oligothiophenes: Relationship between Molecular Structure and Device Performance

被引:39
作者
An, Tae Kyu [1 ]
Jang, Sang Hun [1 ,2 ]
Kim, Seul-Ong [3 ]
Jang, Jaeyoung
Hwang, Jihun [1 ]
Cha, Hyojung [1 ]
Noh, Young Ri [2 ]
Yoon, Soon Byung [2 ]
Yoon, Yong Jin [2 ]
Kim, Lae Ho [1 ]
Chung, Dae Sung [4 ]
Kwon, Soon-Ki [3 ]
Kim, Yun-Hi [2 ]
Lee, Sang-Gyeong [2 ]
Park, Chan Eon [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Chem Engn, POSTECH Organ Elect Lab, Polymer Res Inst, Pohang 790784, South Korea
[2] Gyeongsang Natl Univ, RINS, Grad Sch Mol Mat & Nanochem, Dept Chem, Jinju 660701, South Korea
[3] Gyeongsang Natl Univ, Res Inst Green Energy Convergence Technol REGET, Sch Mat Sci & Engn, Jinju 660701, South Korea
[4] Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
基金
新加坡国家研究基金会;
关键词
aggregation; oligothiophenes; semiconductors; thin films; transistors; THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; ORGANIC SEMICONDUCTORS; END; MOBILITY; DESIGN; QUATERTHIOPHENES; DERIVATIVES; STABILITY; PRECURSOR;
D O I
10.1002/chem.201302588
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A series of three thiophene-naphthalene-based asymmetric oligomers5-decyl-2,2:5,2:5,2-quaterthiophene (DtT), 5-decyl-5-(naphthalen-2-yl)-2,2:5,2-terthiophene (D3TN), and 5-(4-decylphenyl)-5-(naphthalen-2-yl)-2,2-bithiophene (DP2TN)was synthesized by Suzuki cross-coupling reactions. The long alkyl side chains improved both the solubility of the oligomers in solvents and their tendency to self-assemble. UV/Vis absorption measurements suggested that DtT, D3TN, and DP2TN form H-type aggregates with a face-to-face packing structure. In addition, the three oligomers were found to adopt vertically aligned crystalline structures in films deposited on substrates, as revealed by grazing-incidence wide-angle X-ray scattering. These oligomers were used as the active layers of p-type organic field-effect transistors, and the resulting devices showed field-effect mobilities of 3.3x10(-3)cm(2)V(-1)s(-1) for DtT, 1.6x10(-2)cm(2)V(-1)s(-1) for D3TN, and 3.7x10(-2)cm(2)V(-1)s(-1) for DP2TN. The differences in transistor performances were attributed to the degree of overlap and the morphological differences determined by the molecular structures.
引用
收藏
页码:14052 / 14060
页数:9
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