Nanosecond Spin Coherence Time of Nonradiative Excitons in GaAs/AlGaAs Quantum Wells

被引:17
作者
Trifonov, A., V [1 ]
Khramtsov, E. S. [1 ]
Kavokin, K., V [1 ]
Ignatiev, I., V [1 ]
Kavokin, A., V [1 ,2 ,3 ]
Efimov, Y. P. [4 ]
Eliseev, S. A. [4 ]
Shapochkin, P. Yu [4 ]
Bayer, M. [5 ,6 ]
机构
[1] St Petersburg State Univ, Spin Opt Lab, St Petersburg 198504, Russia
[2] Westlake Univ, 18 Shilongshan Rd, Hangzhou 310024, Zhejiang, Peoples R China
[3] Westlake Inst Adv Study, Inst Nat Sci, 18 Shilongshan Rd, Hangzhou 310024, Zhejiang, Peoples R China
[4] St Petersburg State Univ, Resource Ctr Nanophoton, St Petersburg 198504, Russia
[5] Tech Univ Dortmund, Expt Phys 2, D-44221 Dortmund, Germany
[6] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
基金
俄罗斯基础研究基金会;
关键词
DYNAMICS; DEPENDENCE; RELAXATION; ELECTRONS; EXCHANGE;
D O I
10.1103/PhysRevLett.122.147401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the experimental evidence for a nanosecond timescale spin memory based on nonradiative excitons with large in-plane wave vector. The effect manifests itself in magnetic-field-induced oscillations of the energy of the optically active (radiative) excitons. The oscillations detected by a spectrally resolved pump-probe technique applied to a GaAs/AlGaAs quantum well structure in a transverse magnetic field persist over a timescale, which is orders of magnitude longer than the characteristic decoherence time in the system. The effect is attributed to the spin-dependent electron-electron exchange interaction of the optically active and inactive excitons. The spin relaxation time of the electrons belonging to nonradiative excitons appears to be much longer than the hole spin relaxation time.
引用
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页数:6
相关论文
共 41 条
[1]  
Abragam A., 1961, PRINCIPLES NUCL MAGN, P446
[2]  
Amand T., 2017, SPIN PHYS SEMICONDUC, P94
[3]  
[Anonymous], 2004, OPTICAL SPECTROSCOPY
[4]   Optical method for the determination of carrier density in modulation-doped quantum wells -: art. no. 115310 [J].
Astakhov, GV ;
Kochereshko, VP ;
Yakovlev, DR ;
Ossau, W ;
Nürnberger, J ;
Faschinger, W ;
Landwehr, G ;
Wojtowicz, T ;
Karczewski, G ;
Kossut, J .
PHYSICAL REVIEW B, 2002, 65 (11) :1153101-1153109
[5]   Extended pump-probe Faraday rotation spectroscopy of the submicrosecond electron spin dynamics in n-type GaAs [J].
Belykh, V. V. ;
Evers, E. ;
Yakovlev, D. R. ;
Fobbe, F. ;
Greilich, A. ;
Bayer, M. .
PHYSICAL REVIEW B, 2016, 94 (24)
[6]   Mapping of the dark exciton landscape in transition metal dichalcogenides [J].
Berghauser, Gunnar ;
Steinleitner, Philipp ;
Merkl, Philipp ;
Huber, Rupert ;
Knorr, Andreas ;
Malic, Ermin .
PHYSICAL REVIEW B, 2018, 98 (02)
[7]   EXCHANGE INTERACTION OF EXCITONS IN GAAS HETEROSTRUCTURES [J].
BLACKWOOD, E ;
SNELLING, MJ ;
HARLEY, RT ;
ANDREWS, SR ;
FOXON, CTB .
PHYSICAL REVIEW B, 1994, 50 (19) :14246-14254
[8]   Role of the exchange of carriers in elastic exciton-exciton scattering in quantum wells [J].
Ciuti, C ;
Savona, V ;
Piermarocchi, C ;
Quattropani, A ;
Schwendimann, P .
PHYSICAL REVIEW B, 1998, 58 (12) :7926-7933
[9]   Microsecond spin-flip times in n-GaAs measured by time-resolved polarization of photoluminescence -: art. no. 121307 [J].
Colton, JS ;
Kennedy, TA ;
Bracker, AS ;
Gammon, D .
PHYSICAL REVIEW B, 2004, 69 (12)
[10]   Bose-Einstein condensation in semiconductors: The key role of dark excitons [J].
Combescot, Monique ;
Betbeder-Matibet, Odile ;
Combescot, Roland .
PHYSICAL REVIEW LETTERS, 2007, 99 (17)