High-temperature point defect equilibrium in CdTe modelling

被引：0
作者：
Fochuk, P [1 ]
Korovyanko, O [1 ]
Panchuk, O [1 ]
机构：
[1] Chernivtsi Univ, Inst Inorgan Chem, UA-274012 Chernivtsi, Ukraine
来源：
GROWTH, CHARACTERISATION AND APPLICATIONS OF BULK II-VIS | 1999年 / 78卷
关键词：
CdTe; In; high-temperature electroconductivity; defects; models;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
High-temperature (673-1173 K) electrical property (a,RH) measurements in undoped and In-doped (up to 1 x 10(20) at/cm(3)) CdTe were performed under different stoichiometric conditions. Cadmium (tellurium) vapor pressure or temperature electron (hole) density dependences were obtained. The results are described by a computed defect structure model, which optimizes the defect reaction constants. A new In incorporation defect reaction is proposed, explaining the dopant self-compensation mechanism. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：603 / 606
页数：4
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