Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers

被引：9
|
作者：
Weidlich, P. H. [1 ]
Schnedler, M. [1 ]
Eisele, H. [2 ]
Dunin-Borkowski, R. E. [1 ]
Ebert, Ph [1 ]
机构：
[1] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 14期
关键词：
VAPOR-PHASE EPITAXY; LATERAL OVERGROWTH; THREADING DISLOCATIONS; DENSITY GAN; GROWN GAN; EXTENDED DEFECTS; QUANTUM-WELLS; REDUCTION; THICK; HVPE;
D O I：
10.1063/1.4823474
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The spatial distribution and the projected line directions of dislocations intersecting a cross-sectional (10 (1) over bar0) cleavage plane of a GaN(0001) epitaxial layer is mapped using scanning tunneling microscopy. The data is correlated with the spatial positions of v-shaped defects. The dislocations are found to be bent away from the inclined semipolar facets of v-shaped defects, due to a strain-induced repulsive interaction. The dislocation distribution is characterized by agglomerations and intersecting bundles of dislocations with parallel projected line directions, stabilized by many body effects in the repulsive strain interactions. (C) 2013 AIP Publishing LLC.
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页数：4
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