Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

被引：36

作者：

Li, Handong ^{[1
]}

Gao, Lei ^{[1
]}

Li, Hui ^{[1
]}

Wang, Gaoyun ^{[1
]}

Wu, Jiang ^{[1
]}

Zhou, Zhihua ^{[1
]}

Wang, Zhiming ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 07期

基金：

中国国家自然科学基金;

关键词：

VANDERWAALS EPITAXY; DIRAC CONE; PHOTOEMISSION; TRANSPORT;

D O I：

10.1063/1.4792237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. The measured Schottky barrier height at the Bi2Se3-H:Si interface was 0.31 eV. The findings pave the way for economically preparing heterojunctions and multilayers of layered compound families of topological insulators. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792237]

引用

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