Temperature Effect on DC and Equivalent Circuit Parameters of 0.15-μm Gate Length GaN/SiC HEMT for Microwave Applications

被引：59

作者：

Alim, Mohammad Abdul ^{[1
]}

Rezazadeh, Ali A. ^{[2
]}

Gaquiere, Christophe ^{[3
]}

机构：

[1] Univ Chittagong, Dept Appl Phys Elect & Commun Engn, Chittagong 4331, Bangladesh

[2] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

[3] Univ Sci & Technol Lille, Dept Microwave & Semicond, F-59650 Villeneuve Dascq, France

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2016年 / 64卷 / 11期

关键词：

AlGaN/GaN/SiC high-electron-mobility transistor (HEMT); dc and small signal circuit parameters; on-wafer measurements; thermal effect; ALGAN/GAN HEMTS; CHANNEL TEMPERATURE; THERMAL-RESISTANCE; GAN DEVICES; DEPENDENCE; FREQUENCY; SUBSTRATE;

D O I：

10.1109/TMTT.2016.2604815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal characterizations and modeling have been carried out on a 0.15 mu m x (4 x 50) nu m gate GaN-/SiC-based high-electron-mobility transistor varying the temperature from -40 degrees C to 150 degrees C and the frequency up to 50 GHz using on-wafer measurements. The thermal behavior of the dc parameters along with thermal resistance estimation and the equivalent circuit parameters along with cutoff and maximum frequencies were analyzed and reported using a single device. The temperature coefficients of these parameters were presented and deduced the influence of thermal effects on device parameters. These results are important for the circuit designer for future advancement and design optimizations of GaN-based monolithic microwave ICs.

引用

页码：3483 / 3491

页数：9

共 23 条

[1] Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers
Ahmed, A
Islam, SS
Anwar, AFM
[J]. SOLID-STATE ELECTRONICS, 2003, 47 (02) : 339 - 344
[2] High-frequency measurements of AlGaN/GaN HEMTs at high temperatures
Akita, M
Kishimoto, S
Mizutani, T
[J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) : 376 - 377
[3] Small signal model parameters analysis of GaN and GaAs based HEMTs over temperature for microwave applications
Alim, Mohammad A.
Rezazadeh, Ali A.
Gaquiere, Christophe
[J]. SOLID-STATE ELECTRONICS, 2016, 119 : 11 - 18
[4] Thermal characterization of DC and small-signal parameters of 150nm and 250nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate
Alim, Mohammad A.
Rezazadeh, Ali A.
Gaquiere, Christophe
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (12)
[5] Alim MA, 2014, 2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC), P210, DOI 10.1109/EuMIC.2014.6997829
[6] Accurate multibias equivalent-circuit extraction for GaN HEMTs
Crupi, Giovanni
Xiao, Dongping
Schreurs, Dominique M. M. -P.
Limiti, Ernesto
Caddemi, Alina
De Raedt, Walter
Germain, Marianne
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (10) : 3616 - 3622
[7] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT
DAMBRINE, G
CAPPY, A
HELIODORE, F
PLAYEZ, E
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) : 1151 - 1159
[8] Dependence of GaN HEMT Millimeter-Wave Performance on Temperature
Darwish, Ali M.
Huebschman, Benjamin D.
Viveiros, Edward
Hung, H. Alfred
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (12) : 3205 - 3211
[9] Thermal resistance calculation of AlGaN-GaN devices
Darwish, AM
Bayba, AJ
Hung, HA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (11) : 2611 - 2620
[10] Darwish AM, INT J MICROW SCI TEC, V2011

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