Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

被引：80

作者：

Palacios, T ^{[1
]}

Chini, A ^{[1
]}

Buttari, D ^{[1
]}

Heikman, S ^{[1
]}

Chakraborty, A ^{[1
]}

Keller, S ^{[1
]}

DenBaars, SP ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 03期

关键词：

current gain cutoff frequency; gallium nitride (GaN); high-electron mobility transistor (HEMT); high-frequency performance; transconductance; two-tone linearity;

D O I：

10.1109/TED.2005.863767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Double-channel structures have been used in AlGaN/GaN high electron mobility transistors to reduce the access resistance. Carrier densities as high as 2.9 X 10(13) cm(-2) and mobilities in the 1300 cm(2)/V. S range have been obtained in the access region. Also, the correct design of the potential barrier between the different channels allowed tailoring the differential access resistance to enhance the linearity of the transistors. This increase in linearity has been measured as a flatter profile of the transconductance and cutoff frequency versus current and as an improvement of more than 2 dB in large-signal two-tone linearity measurements.

引用

页码：562 / 565

页数：4

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