Effectiveness of metallic mirror for promoting the photoresponse of InGaAsPIN photodiode

被引：5
作者：
Ho, CL
Wu, MC [1 ]
Ho, WJ
Lia, JW
机构：
[1] Natl Tsing Hua Univ, Elect Engn Res Inst, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Chunghwa Telecom co Ltd, Telecommun Labs, Sect 3, Tao Yuan 326, Taiwan
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 05期
关键词：
D O I：
10.1016/S0038-1101(98)00340-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effectiveness of metallic mirror for raising the photoresponse of vertical-illuminated InGaAs PIN photodiode was calculated and experimentally verified. The preliminary results show that an InGaAs PIN photodiode with a 1 mu m absorption layer and Ti/Pt/Au backside metallization can reach a responsivity of similar to 0.8 A/W or a quantum efficiency of similar to 76% at 1.3 mu m wavelength. Such values indicate that the incident light travels the absorption region more than 1 mu m and in turn provide the evidence for light reflection. From the comparison with the calculated responsivity spectra, the reflectivity of Ti/Pt/Au can be derived with a value of similar to 0.4, which agrees reasonably well with the calculated metallic reflectivity. (C) 1999 Elsevier Science Ltd. All rights reserved.
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收藏
页码：961 / 967
页数：7
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