Monte Carlo simulation of electron transport in doped silicon

We present a new theoretical approach to study the electron transport in doped silicon under low electric fields. The charge distribution of the impurities is described by the Thomas-Fermi theory in the energy functional formulation. We have included many-particle effects, such as dynamical screening and multiple scattering, which become important in heavily doped semiconductors. Analytical expressions for the scattering cross section for various species of dopants using the Born approximation up to second order are derived. Monte Carlo simulations including all important scattering mechanism have been perfomed in the doping concentration range of 10(15) to 10(21) cm(-3). The agreement with experimental data is excellent. The results confirm not only the experimental data of the mobility enhancement of minority electrons in degenerate silicon but also the lower electron mobility in As-doped silicon in comparison to P-doped silicon.