Passive mode locking in a multisegment laser diode with an external cavity

被引：3
作者：
Andreeva, EV [1 ]
Koroteev, NI
Magnitskii, SA
Salik, E
Starodubov, DS
Feinberg, J
Shramenko, MV
Yakubovich, SD
机构：
[1] Moscow MV Lomonosov State Univ, Ctr Int Laser, Moscow 119899, Russia
[2] Univ So Calif, Los Angeles, CA USA
[3] Tech Univ, Moscow State Inst Radio Engn Elect & Automat, Moscow 117454, Russia
来源：
QUANTUM ELECTRONICS | 1999年 / 29卷 / 02期
关键词：
D O I：
10.1070/QE1999v029n02ABEH001425
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The structure and operating conditions of multisegment laser (GaAl)As diodes with passive locking of the modes of an external cavity (bulk and fibre) were optimised. Regular trains of optical single pulses of picosecond duration were generated in a spectral range 850-860 nm. The peak power of these pulses was several watts and the repetition rate was near 1 GHz. Under certain conditions these output pulses were linearly chirped, i.e. they were suitable for subpicosecond time compression. Laboratory prototypes were made of miniature light-emitting modules with these characteristics.
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页码：103 / 108
页数：6
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