Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs

被引：22

作者：

Zhang, Ying-Ying ^{[1
]}

Oh, Jungwoo ^{[2
]}

Li, Shi-Guang ^{[1
]}

Jung, Soon-Yen ^{[1
]}

Park, Kee-Young ^{[1
]}

Shin, Hong-Sik ^{[1
]}

Lee, Ga-Won ^{[1
]}

Wang, Jin-Suk ^{[1
]}

Majhi, Prashant ^{[2
]}

Tseng, Hsing-Huang ^{[2
]}

Jammy, Raj ^{[2
]}

Bae, Tae-Sung ^{[1
,3
]}

Lee, Hi-Deok ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea

[2] SEMATECH, Austin, TX 78741 USA

[3] Korea Basic Sci Inst, Jeonju Ctr, Jeonju 561756, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 01期

关键词：

annealing; metallic thin films; MOSFET; nickel; nickel compounds; surface morphology; thermal stability; titanium compounds; ytterbium; SI; TRANSITION; SUBSTRATE; MOBILITY;

D O I：

10.1149/1.3006319

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this article, ytterbium (Yb) incorporation into NiGe is proposed to improve the thermal stability of Ni germanide for high-performance Ge metal-oxide-semiconductor field-effect transistors (Ge MOSFETs). The Yb/Ni/TiN structure shows suppression of NiGe agglomeration and better surface morphology than the Ni/TiN structure after a postgermanidation annealing of up to 550 degrees C for 30 min. It is notable that Yb atoms distribute uniformly at the top region of NiGe. NiGe agglomeration was retarded by Yb incorporation, and the thermal stability of NiGe was therefore improved.

引用

页码：H18 / H20

页数：3

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