Doping dependence of low-frequency noise in polycrystalline SiGe film resistors

被引：8

作者：

Chen, XY ^{[1
]}

Salm, C

机构：

[1] Univ Tromso, Fac Sci, Dept Phys, N-9037 Tromso, Norway

[2] Univ Twente, Dept Elect Engn, NL-7500 AE Enschede, Netherlands

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.124401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Study on low-frequency noise in polycrystalline SiGe material is conducted. We use poly-Si0.7Ge0.3 resistors that were deposited by low-pressure chemical vapor deposition and were doped with different concentrations of boron by ion implantation. The doping dependence of low-frequency noise of poly-SiGe is similar to that of poly-Si. However, the value of alpha for poly-SiGe is one order smaller than that for poly-Si. We found that decreasing boundary scattering at higher doping concentration results in increased mobility, and decreased 1/f noise parameter alpha. (C) 1999 American Institute of Physics. [S0003-6951(99)01230-9].

引用

页码：516 / 518

页数：3

共 15 条

[1] Low frequency noise in heavily doped polysilicon thin film resistors [J].