EFFECT OF POST ANNEALING ON SURFACE MORPHOLOGY, ELECTRICAL AND OPTICAL PROPERTIES OF DC REACTIVE MAGNETRON SPUTTERED ZINC ALUMINUM OXIDE THIN FILMS FOR OPTOELECTRONIC DEVICES

被引：0

作者：

Kumar, B. Rajesh ^{[1
,2
]}

Rao, T. Subba ^{[2
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[2] Sri Krishnadevaraya Univ, Dept Phys, Mat Res Lab, Anantapur 515003, Andhra Pradesh, India

来源：

JOURNAL OF OVONIC RESEARCH | 2012年 / 8卷 / 05期

关键词：

ZAO thin films; DC magnetron sputtering; Scanning electron microscope; Optical transmittance; ZNO FILMS; PHOTOLUMINESCENCE; DEPOSITION; LIGHT;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work Zinc Aluminum Oxide (ZAO) thin films were deposited on glass substrate using DC reactive magnetron sputtering method. The thin films were post annealed at 200 degrees C after deposition for 15 min, 30 min, 45 min, 60 min and 90 min. The grain size obtained from SEM images of ZAO thin films are found to be in the range of 20 -26 nm. The resistivities of annealed ZAO films are found to be in the range of 8.8 X 10(-4) Omega.cm to 3.2 X 10(-4) Omega.cm. All films exhibit an average transmittance of >85% in visible region. The optical band gap of nanostructured ZAO thin films increased from 3.49 to 3.60 eV with increase of annealing time due to Burstein-Moss effect.

引用

页码：120 / 126

页数：6

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